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Canada-191980-REFRACTORIES कंपनी निर्देशिकाएँ
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कंपनी समाचार :
- New candidate for universal memory is fast, low-power, stable . . .
Researchers at Stanford have demonstrated that a new material may make phase-change memory – which relies on switching between high and low resistance states to create the ones and zeroes of computer data – an improved option for future AI and data-centric systems
- Universal memory breakthrough brings the next generation of . . .
Universal computer memory that's both super-fast and energy efficient is one step closer to reality after scientists built an "extremely" stable prototype using a completely new material
- The Next New Memories - Semiconductor Engineering
Among the next new memory types are: FeFET or FeRAM: A next-generation ferroelectric memory Nanotube RAM: In R D for years, nanotube RAM is targeted to displace DRAM Others are developing carbon nanotubes and next-generation memories on the same device Phase-change memory: After shipping the first PCM devices, Intel is readying a new version
- A Seismic New Semiconductor Could Lead to the Holy Grail of . . .
Scientists are searching for a material that could one day bring universal energy—that is, random-access memory and long-term solid-state storage—into one device
- Five emerging memory technologies, with MRAM in pole position
Two semiconductor analysts have written an Emerging Memories report and suggest MRAM has good prospects for replacing SRAM and NOR flash in edge computing devices needing to process and analyze data in real-time
- Closing in on universal memory for large data processing
Researchers at Stanford have demonstrated that a new material may make phase-change memory – which relies on switching between high and low resistance states to create the ones and zeroes of computer data – an improved option for future AI and data-centric systems
- The Next-Generation of Memory Technology – New Material Shows . . .
Tohoku University researchers have advanced phase change memory by using sputtering to create niobium telluride (NbTe4), a material with superior storage and thermal capabilities Niobium telluride (NbTe4) improves phase change memory with better thermal stability and efficiency, enabling next-generation data storage
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